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mil-prf-19500/495c 10 august 1998 superseding mil-prf-19500/495b 6 march 1998 performance specification sheet semiconductor device, unitized, dual-transistor, npn, silicon, types 2n5793, 2n5794 and 2n5794u, jan, jantx, and jantxv this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the requirements for two electrically isolated, unmatched, npn, silicon, transistors as one dual unit . three levels of product assurance are provided for each device type as specified in mil-prf-19500. 1.2 physical dimensions. see figures 1 (similar to t0-99) and 2 (surface mount). 1.3 maximum ratings. t a = +25 q c, unless otherwise specified. p t 1/ t a = +25 q c i c v cbo v ceo v ebo t op and t stg one section total device w 0.5 w 0.6 ma dc 600 v dc 75 v dc 40 v dc 6.0 q c -65 to +200 1/ for t a t 25 q c, derate linearly 2.86 mw/ q c one section, 3.43 mw/ q c total. c obo h fe switching v cb = 10 v dc i e = 0 100 khz d f d 1 mhz v ce = 20 v dc i c = 20 ma dc f = 100 mhz t on t off minimum maximum pf 8.0 2.0 10.0 ns 45 ns 310 amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. this is an advance copy of the dated document. the final document from defense automated printing service may be slightly different in format due to electronic conversion processes. actual technical content will be the same. the documentation and process conversion measures necessary to comply with this revision shall be completed by 10 november 1998. inch-pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this docume nt should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/495c 2 1.4 primary electrical characteristics. t a = +25 q c, unless otherwise specified. h fe1 h fe4 1/ v ce(sat)1 1/ v ce(sat)2 1/ v be(sat)1 1/ limits v ce = 10 v dc i c = 100 a dc v ce = 10 v dc i c = 150 ma dc i c = 150 ma dc i b = 15 ma dc i c = 300 ma dc i b = 30 ma dc i c = 150 ma dc i b = 15 ma dc min max min max max max min max 2n5793 2n5794 2n5794u 20 35 35 40 100 100 120 300 300 v dc 0.3 0.3 0.3 v dc 0.9 0.9 0.9 v dc 0.6 0.6 0.6 v dc 1.2 1.2 1.2 1/ pulsed (see 4.5.1). 2. applicable documents 2.1 government documents. 2.1.1 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this do cument to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification military mil-prf-19500 - semiconductor devices, general specification for. standards military mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the standardization documents order desk, building 4d, 700 robbins avenue, philadelphia, pa 19111-5094.) 2.2 order of precedence. in the event of a conflict between the text of this document and the references cited herein, the te xt of this document shall take precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specifi c exemption has been obtained.
mil-prf-19500/495c 3 dimensions inches millimeters symbol min max min max note cd .305 .335 7.75 8.51 ch .150 .185 3.81 4.70 hd .335 .370 8.51 9.40 ld .016 .021 0.41 0.53 ll .500 12.70 lc .200 bsc 5.08 bsc 2 lc1 .100 bsc 2.54 bsc lc2 .100 bsc 2.54 bsc tl .029 .045 0.74 1.14 1 tw .028 .034 0.71 0.86 45 q tp 45 q tp 4 notes: 1. measured from maximum diameter of the product. 2. leads having maximum diameter .019 inch (.483 mm) measured in gaging plan .054 inch (1.37 mm) + .001 inch (.025 mm) - .000 inch (.000 mm) below the seating plane of the product shall be within .007 inch (.178 mm) of their true position relative to a maximum width tab. 3. the product may be measured by direct methods or by gauge. 4. tab centerline. figure 1. physical dimensions (2n5793 and 2n5794).
mil-prf-19500/495c 4 inches mm inches mm .022 0.56 .080 2.03 .026 0.66 .082 2.08 .028 0.71 .095 2.41 .039 0.99 .098 2.49 .045 1.14 .100 2.54 .055 1.40 .105 2.67 .058 1.47 .165 4.19 .060 1.52 .175 4.44 .066 1.68 .240 6.10 .070 1.78 .250 6.35 figure 2. physical dimensions (2n5794u).
mil-prf-19500/495c 5 3. requirements 3.1 associated specification. the individual item requirements shall be in accordance with mil-prf-19500 and as specified her ein. 3.2 abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil -prf- 19500. 3.3 interface requirements and physical dimensions. the interface requirements and physical dimensions shall be as specified in mil-prf-19500, mil-hdbk-6100, and herein. 3.3.1 lead finish. lead finish shall be solderable as defined in mil-prf-19500, mil-std-750, and herein. 3.4 marking. marking shall be in accordance with mil-prf-19500. at the option of the manufacturer, the marking of the countr y of origin may be omitted from the body of the device, but shall be retained on the initial container. 3.5 electrical performance characteristics. unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. 3.6 electrical test requirements. the electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.7 qualification. devices furnished under this specification shall be products that are authorized by the qualifying activit y for listing on the applicable qualified products list before contract award (see 4.2 and 6.4 ). 4. verification 4.1 classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection. qualification inspection shall be in accordance with mil-prf-19500 and as specified herein. 4.3 screening (jantx and jantxv levels only). screening shall be in accordance with mil-prf-19500 (table iv), and as specif ied herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of mil-prf- 19500) measurement jantx and jantxv levels 3c thermal impedance (see 4.3.2) 9 not applicable 10 48 hours minimum 11 i cbo2 and h fe4 12 burn-in (see 4.3.1) 80 hours minimum 13 subgroup 2 of table i herein; i cbo2 = 100 percent of initial value or 5 na dc; whichever is greater. h fe4 = r 15 percent of initial value.
mil-prf-19500/495c 6 4.3.1 burn-in conditions. burn-in conditions are as follows: t a = room ambient as defined in the general requirements of mil-std-750, paragraph 4.5; v cb = 10 - 30 v dc; p t = 300 mw each section (600 mw total device). 4.3.2 thermal impedance (z t jx measurements) . the z t jx measurements shall be performed in accordance with mil-std-750, method 3131. a. i m measurement current --------------------- 5 ma. b. i h forward heating current ------------------ 200 ma (min). c. t h heating time --------------------------------- 25 - 30 ms. d. t md measurement delay time -------------- 60 p s max. e. v ce collector-emitter voltage -------------- 10 v dc minimum the maximum limit for z t jx under these test conditions are z t jx (max) = 72 q c/w. 4.4 conformance inspection. conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. if alternate screening is being performed per mil-prf-19500, a sample of screened devices shall be submitted to and pass the requirements of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied per 4.4.2). 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the conditions specified for subgroup te sting as follows. electrical measurements (end-points) and delta requirements shall be after each step below and shall be in accordance with group a, subgroup 2 and 4.5.2 herein. 1/ step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = 10 -30 v dc, t j = 150 q c min. no heat sink or forced- air cooling on the devices shall be permitted. n = 45 devices, c = 0 2 1039 the steady state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life (non-operating), t = 340 hours, t a = +200 q c. n = 22, c = 0 1/ separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new assembly lot option is exercised, the failed assembly lot shall be scrapped. 4.4.2.1 group b sample selection. samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the conditions specified for subgroup tes ting in table vii of mil-prf-19500, and as follows (jan, jantx, and jantxv) for group c testing. electrical measurements (end points) a nd delta requirements shall be in accordance with group a, subgroup 2 and 4.5.2 herein. subgroup method condition c2 2036 test condition e; not applicable for u suffix devices. c6 not applicable
mil-prf-19500/495c 7 4.4.3.1 group c sample selection. samples for subgroups in group c shall be chosen at random from any inspection lot contai ning the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. testing of a subgroup using a single device type enclosed in the intended package type shall be conside red as complying with the requirements for that subgroup. 4.4.4 group e inspection. group e inspection shall be performed for qualification or re-qualification only. the tests spe cified in table ii herein must be performed to maintain qualification. 4.5 method of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil-std-750. 4.5.2 delta requirements. delta requirements shall be as specified below: step inspection mil-std-750 symbol limit unit method conditions 1 collector-base cutoff current 3036 bias condition d, v cb = 50 v dc ' i cb02 1/ 100% of initial value or 8 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed see 4.5.1 ' h fe4 1/ 25% change from initial reading. 1/ devices which exceed the group a limits for this test shall not be accepted.
mil-prf-19500/495c 8 table i. group a inspection inspection 1/ mil-std-750 limit unit method conditions symbol min max subgroup 1 2 / visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 solderability 3/ resistance to solvents 3/, 4 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temprature cycling 3/ 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements group a, subgroup 2 bond strength 3/ 2037 precondition t a = +250 q c at t = 24 hrs or t a = 300 q c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 collector to base cutoff current 3036 bias condition d, v cb = 75 v dc i cbo1 10 p a dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1) v (br)ceo 40 v dc emitter to base cutoff current 3061 v eb = 6 v dc i ebo1 10 p a dc collector to base cutoff current 3036 bias condition d; v cb = 50 v dc i cbo2 10 na dc emitter to base cutoff current 3061 bias condition d; v eb = 4 v dc i ebo2 10 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc h fe1 2n5793 20 2n5794, 2n5794u 35 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 1.0 ma dc h fe2 2n5793 25 2n5794, 2n5794u 50 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc pulsed (see 4.5.1) h fe3 2n5793 35 2n5794, 2n5794u 75 see footnotes at end of table.
mil-prf-19500/495c 9 table i. group a inspection inspection 1/ mil-std-750 limit unit method conditions symbol min max subgroup 2 - continued forward-current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed (see 4.5.1) h fe4 2n5793 40 120 2n5794, 2n5794u 100 300 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 300 ma dc; pulsed (see 4.5.1) h fe5 2n5793 25 2n5794, 2n5794u 40 forward-current transfer ratio 3076 v ce = 1.0 v dc; i c = 150 ma dc; pulsed (see 4.5.1) h fe6 2n5793 20 2n5794, 2n5794u 50 collector-emitter saturation voltage 3071 i c = 150 ma dc; i b = 15 ma dc pulsed (see 4.5.1) v ce(sat)1 0.3 v dc collector-emitter saturation voltage 3071 i c = 300 ma dc; i b = 30 ma dc; pulsed (see 4.5.1) v ce(sat)2 0.9 v dc base-emitter saturation voltage 3066 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v be(sat)1 0.6 1.2 v dc base-emitter saturation voltage 3066 test condition a; i c = 300 ma dc; i b = 30 ma dc; pulsed (see 4.5.1) v be(sat)2 1.8 v dc subgroup 3 high temperature operation t a = +150 q c collector to base cutoff current 3036 bias condition d;v cb = 50 v dc i cbo3 10 p a dc low temperature operation t a = -55 q c forward-current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc h fe7 2n5793 16 2n5794, 2n5794u 40 subgroup 4 magnitude of small-signal short- circuit forward current transfer ratio 3306 v ce = 20 v dc; i c = 20 ma dc; f = 100 mhz | h fe | 2 10 open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz < f < 1 mhz c obo 8pf see footnotes at end of table.
mil-prf-19500/495c 10 table i. group a inspection - continued inspection 1/ mil-std-750 limit unit method conditions symbol min max subgroup 4 - continued input capacitance (output open- circuited) 3240 v eb = 0.5 v dc; i c = 0; 100 khz < f < 1 mhz c ibo 33 pf pulse response 3251 test condition a, (see figure 3) saturated turn-on time v cc = 30 v dc; i c = 150 ma dc; i b1 = 15 ma dc, v be(off) = 0.5 v dc t on 45 ns saturated turn-off time v cc = 30 v dc; i c = 150 ma dc; i b1 = i b2 =15 ma dc t off 310 ns subgroups 5 and 6 not required subgroup 7 decap internal visual (design verification) 2075 n = 1 device, c = 0 1/ for sampling plan see mil-prf-19500. 2/ for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3/ separate samples may be used. 4/ not required for laser marked devices.
mil-prf-19500/495c 11 table ii. group e inspection (all quality levels) - for qualification only inspection mil-std-750 qualification method conditions subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements subgroup 2 intermittent life electrical measurements subgroup 3 not applicable subgroup 4 not applicable subgroup 5 not applicable 1051 1071 1037 test condition c, 500 cycles see group a, subgroup 2 and 4.5.2 herein. intermittent operation life: v cb = 10 v dc , 6,000 cycles, ' t j t +100 q c; forced air cooling allowed on cooling cycle only. see group a, subgroup 2 and 4.5.2 herein. 12 devices c = 0 45 devices c = 0
mil-prf-19500/495c 12 figure 3. switching time test circuits.
mil-prf-19500/495c 13 5. packaging 5.1 packaging. for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging act ivity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contact ing the responsible packaging activity. 5.2 marking. unless otherwise specified (see 6.2), marking shall be in accordance with mil-std-129. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes. the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents should specify the following: a. issue of dodiss to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. lead finish (see 3.3.1). c. type designation and product assurance level. d. packaging requirements (see 5.1). 6.3 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the pre vious issue due to the extent of the changes. 6.4 qualification. with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified products list qpl-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification of product s may be obtained from defense supply center columbus, dscc-vqe, columbus, oh 43216. concluding material custodians: preparing activity: air force - 17 dla - cc review activities (project 5961-2048-06) air force - 13, 19, 85
mil-prf-19500/495c 14 standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on cu rrent contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced doc ument(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/495c 2. document date 10 august 1998 3. document title semiconductor device, unitized, dual-transistor, npn, silicon, types 2n5793, 2n5794 and 2n5794u, jan, jantx, and jantxv 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vat columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense quality and standardization office 5203 leesburg pike, suite 1403, falls church, va 22041-3466 telephone (703) 756-2340 dsn 289-2340 dd form 1426, oct 89 previous editions are obsolete

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